Electronic Devices and Circuits(EDC)

Hello everyone, in last blog I told about Signal and Systems...

Now before beginning Electronics Devices and Circuits.. .give 2-4 hrs of time for revision of Signal and System..revise notes,solve questions which you won't able to solve in first attempt..and important topics which you find difficult to understand..so give a quick look to all these ..

Now we will begin our next subject i.e EDC,,

Study it from :-

• notes(coaching or self)
• Millman Halkias 
• Sedra and Smith
• Previous year Gate,IES questions
• kannodia (for few formulas)
• Integrated Ciruits (only main topics)

Start with basic knowledge ..as this subject is just apriori for Analog electronics..by reading EDC we get basic knowledge ...

What you have to study;-

• About temperatures values(Room,Ambient,Absolute)
• Thermal Voltage
• Band Gap(Forbidden voltage)
• Conductivity,resistivity,mobility
• Intrinsic Semiconductor (intrinsic concentration)
• Silicon and Germanium Semiconductor( their atomic no.,weight,band gap..etc)
• p-type ,n-type semiconductor(band diagram)
• Fermi Voltage
• Drift and Diffusion Current(metals have only drift current,semiconductor have diffusion current ..how to produce drift current from semiconductor)
• Generation,recombination of electron and hole pair.
• Continuity equation(read from Millman Halkias)
• Fermi Energy for n-type,p-type,intrinsic,prob. of electron at particular energy(equation)
• Temperature variation for conductivity(mainly for extrinsic semiconductor),carrier concentration
• LED,LCD,Photodiode,Avalanche-photodiode,Zener diode,Solar cell,Ge-Si diode,Ga-As diode,Laser,varactor diode
• Diffusion capacitance(forward bias),transition or depletion capacitance(reverse bias),formulae of capacitance
• P-N Diode(methods of fabrication),forward bias voltage,reverse bias voltage,working,Holes and electron movement,minimum conductivity,charge distribution in depletion region,derivation of open circuit voltage,relation between open circuit voltage,electric field and depletion width,junction law,difference between depletion voltage,cut-in voltage and diode voltage..their values for Si and Ge semiconductor,how to convert p-type into n-type and vice-versa(amphoteric materials)
• Why turn-ff time is more than turn-on time...or reverse recovery time is more than forward recovery time..
• Hall effect..hall voltage..what we can know from hall effect,,
• Thermal excitation,intrinsic excitation,extrinsic excitation
• BJT-CE,CC,CB-V-I diagram for input and output..PNP transistor or NPN transistor working (internal mechanism),transit time,carrier lifetime,emitter gain,propagation constant,current gain(relation),alpha,beta,gamma,early voltage,early effect,base width modulation,output resistance
• Relation of Beta with temperature.
• FET-junction type,depletion type,enhancement type(internal diagram,working),MOS capacitor(internal diagram),pinch off voltage,condition for saturation,current formulae,transconductance and resistance formulae,difference between depletion and enhancement.,relation between Vgs cutoff and pinch off voltage,threshold voltage-benefit of it,ways of reducing it,difference between N-type and P-type,amplification factor,why poysilicon is used..thickness formula,,relation between resistance and thickness...
• Why there is break line in symbol of enhancement FET,channel length modulation,output resistance,how to avoid breakage of channel.
• Why BJT is used in active mode and FET in saturation for amplifier?
• Thyristor family(just basic knowledge)
• Integrated circuits-fabrication method..why inductor can't fabricated..ways of fabricating resistance,diode,capacitor,bjt,fet..Lithography,dry and wet oxidation,ion implantation method..its benefits,complimentary error function profile. 

Note:-
Read Diode,BJT,FET from Millman..just basic knowledge ..internal diagram..working.
Focus on depletion region of diode..read from Sedra and Smith..in beginning it is given how to find no. of charges in depletion region.. read abrupt junction,working of thyristor..
In junction FET why the depletion region has that different shape..why channel is more narrow at drain side?
Read basics because its knowledge is needed in Analog electronics.

Best of Luck ..prepare well..if have any doubt then do comment..

Next Subject we are going to take is Communication System..

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